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Improved flash memory grows in popularityLAWTON, George.Computer (Long Beach, CA). 2006, Vol 39, Num 1, pp 16-18, issn 0018-9162, 3 p.Article

Flash Storage MemoryLEVENTHAL, Adam.Communications of the ACM. 2008, Vol 51, Num 7, pp 47-51, issn 0001-0782, 5 p.Article

The Five-Minute Rule 20 Years Later (and How Flash Memory Changes the Rules)GRAEFE, Goetz.Communications of the ACM. 2009, Vol 52, Num 7, pp 48-59, issn 0001-0782, 12 p.Article

l'avènement des mémoires flash = The advent of the flash memoriesMARTIN, Gabriel.Recherche (Paris, 1970). 2004, Num 375, pp 84-85, issn 0029-5671, 2 p.Article

Test and repair of non-volatile commodity and embedded memories (NAND flash memory )SHIROTA, Riichiro.Proceedings - International Test Conference. 2002, issn 1089-3539, isbn 0-7803-7542-4, p. 1221Conference Paper

What the Future Holds for Solid-State MemorySTRAUSS, Karin; BURGER, Doug.Computer (Long Beach, CA). 2014, Vol 47, Num 1, pp 24-31, issn 0018-9162, 8 p.Article

Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memoriesKURATA, Hideaki; SAEKI, Shunichi; KOBAYASHI, Takashi et al.2002 symposium on VLSI circuits. 2002, pp 302-303, isbn 0-7803-7310-3, 2 p.Conference Paper

A 125MHz burst mode 0.18μm 128Mbit 2 bits per cell flash memoryCASTRO, H. A; AUGUSTINE, K; HAID, C et al.2002 symposium on VLSI circuits. 2002, pp 304-307, isbn 0-7803-7310-3, 4 p.Conference Paper

A File System All Its OwnLEVENTHAL, Adam H.Communications of the ACM. 2013, Vol 56, Num 5, pp 64-67, issn 0001-0782, 4 p.Article

Un turbo pour démarrer l'ordinateurPENEL, Henri-Pierre; DE LA TAILLE, Renaud.Recherche (Paris, 1970). 2007, Num 409, pp 80-81, issn 0029-5671, 2 p.Article

Positive and negative tone double patterning lithography for 50nm flash memoryLIM, Chang-Moon; KIM, Seo-Min; MOON, Seung-Chan et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6197-0, vol 1, 615410.1-615410.8Conference Paper

A 3.3V 4Gb four-level NAND flash memory with 90nm CMOS technologyLEE, Seungjae; LEE, Young-Taek; KIM, Hyung-Suk et al.IEEE International Solid-State Circuits Conference. 2004, pp 52-53, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

A space-efficient flash memory software for mobile devicesRYU, Yeonseung; CHUNG, Tae-Sun; LEE, Myungho et al.Lecture notes in computer science. 2005, issn 0302-9743, isbn 3-540-25860-4, 4Vol, part IV, 72-78Conference Paper

Embedded flash memory for security applications in a 0.13μm CMOS logic processRASZKA, Jaroslav; ADVANI, Manik; TIWARI, Vipin et al.IEEE International Solid-State Circuits Conference. 2004, pp 46-47, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Nanoparticle floating gate flash memoriesBANERJEE, S; KIM, D; KIM, T et al.DRC : Device research conference. 2004, pp 13-14, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

What we have learned on flash memory reliability in the last ten yearsCAPPELLETTI, Paolo; BEZ, Roberto; MODELLI, Alberto et al.International Electron Devices Meeting. 2004, pp 489-492, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Split-gate NAND flash memory at 120nm technology node featuring fast programming and eraseHSU, Cheng-Yuan; HUNG, Chi-Wei; HSUE, C. C et al.Symposium on VLSI Technology. sd, pp 78-79, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

Novel program versus disturb window characterization for split-gate flash cellSUNG, Hung-Cheng; LEI, Tan Fu; HSU, Te-Hsun et al.IEEE electron device letters. 2005, Vol 26, Num 3, pp 194-196, issn 0741-3106, 3 p.Article

Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGU, S. H; WANG, M. T; CHAN, C. T et al.IEEE international reliability physics symposium. 2004, pp 639-640, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

Different cognitive functions in relation to falls among older persons immediate memory as an independent risk factor for fallsVAN SCHOOR, Natasja M; SMITH, Johannes H; PLUIJM, Saskia M. F et al.Journal of clinical epidemiology. 2002, Vol 55, Num 9, pp 855-862, issn 0895-4356, 8 p.Article

Effect of field oxide structure on endurance characteristics of NAND flash memoryKIYONG KIM; JOONGHO YOON; YUNGSAM KIM et al.Electronics letters. 2014, Vol 50, Num 10, pp 739-741, issn 0013-5194, 3 p.Article

Employing vertical dielectric layers to improve the operation performance of flash memory devicesHO, Chia-Huai; CHANG-LIAO, Kuei-Shu; LU, Chun-Yuan et al.Microelectronics and reliability. 2009, Vol 49, Num 4, pp 371-376, issn 0026-2714, 6 p.Article

Competitive analysis of flash-memory algorithmsBEN-AROYA, Avraham; TOLEDO, Sivan.Lecture notes in computer science. 2006, pp 100-111, issn 0302-9743, isbn 3-540-38875-3, 1Vol, 12 p.Conference Paper

Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memoryCHU, Wen-Ting; LIN, Hao-Hsiung; TU, Yeur-Luen et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 616-618, issn 0741-3106, 3 p.Article